document number: 93166 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 hyperfast rectifier, 8 a fred pt ? VS-8E2TH06-E, vs-8e2th06-m, vs-8e2th06fp-e vishay semiconductors features ? hyperfast recovery time, reduced q rr and soft recovery ? 175 c maximum operating junction temperature ? for pfc crm/ccm operation ? true 2 pin package ? low forward voltage drop ? low leakage current ? fully isolated package (v ins = 2500 v rms ) ? compliant to rohs directive 2002/95/ec ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level description/applications state of the art hyperfast reco very rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time, and soft recovery. the planar structure and th e platinum doped life time control guarantee the best ov erall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac-to-dc section of smps, inverters or as freewheeling diodes. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package 2l to-220ac, 2l to-220 fp i f(av) 8 a v r 600 v v f at i f 2.5 v t rr (typ.) 17 ns t j max. 175 c diode variation single die 2l to-220ac 2l to-220 full-pak ba s e cathode 2 3 anode 1 cathode 2 anode 1 cathode v s -8e2th06 v s -8e2th06fp absolute maximum ratings parameter symbol test conditions values units peak repetitive reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 133 c 8 a full-pak t c = 78 c non-repetitive peak surge current i fsm t j = 25 c 70 peak repetitive forward current i fm 16 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 8 a - 2.1 2.5 i f = 8 a, t j = 150 c - 1.6 1.9 reverse leakage current i r v r = v r rated - 0.2 35 a t j = 150 c, v r = v r rated - 50 350 junction capacitance c t v r = 600 v - 6 - pf series inductance l s measured lead to lead 5 mm from package body - 8 - nh
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93166 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-aug-10 VS-8E2TH06-E, vs-8e2th06-m, vs-8e2th06fp-e vishay semiconductors hyperfast rectifier, 8 a fred pt ? dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 17 23 ns i f = 8.0 a, di f /dt = 100 a/s, v r = 30 v - 22 25 t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 390 v -22- t j = 125 c -43- i f = 8 a di f /dt = 600 a/s v r = 390 v -33- peak recovery current i rrm t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 390 v -3.1- a t j = 125 c -5.2- i f = 8 a di f /dt = 600 a/s v r = 390 v -13- reverse recovery charge q rr t j = 25 c i f = 8 a di f /dt = 200 a/s v r = 390 v -32- nc t j = 125 c - 120 - i f = 8 a di f /dt = 600 a/s v r = 390 v - 230 - thermal - mechanical specifications parameter symbol test condition s min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case r thjc -22.4 c/w full-pak - 5 5.5 thermal resistance, junction to am bient per leg r thja typical socket mount - - 70 typical thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2-g -0.07- oz. mounting torque 6 (5) - 12 (10) kgf cm (lbf in) marking device case style to-220 8e2th06 case style to-220 full-pak 8e2th06fp
document number: 93166 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 VS-8E2TH06-E, vs-8e2th06-m, vs-8e2th06fp-e hyperfast rectifier, 8 a fred pt ? vishay semiconductors fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction capacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics (to-220) i f - instantaneous forward current (a) v f - forward voltage drop (v) 0 0.5 1.0 1.5 2.5 2.0 3.0 3.5 0.1 1 10 100 93166_01 t j = 150 c t j = 25 c t j = 175 c i r - reverse current (ma) v r - reverse voltage (v) 0 100 200 300 500 400 600 0.001 0.01 0.1 1 10 100 93166_02 t j = 125 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c t j = 175 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 100 200 400 500 300 600 1 100 10 93166_03 t j = 25 c 0.01 0.1 1 10 0.00001 93166_04 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 s ingle pul s e (thermal re s i s tance)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93166 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-aug-10 VS-8E2TH06-E, vs-8e2th06-m, vs-8e2th06fp-e vishay semiconductors hyperfast rectifier, 8 a fred pt ? fig. 5 - maximum thermal impedance z thjc characteristics (full-pak) fig. 6 - maximum allowable case temperature vs. average forward current (to-220) fig. 7 - maximum allowable case temperature vs. average forward current (full-pak) fig. 8 - forward power loss characteristics note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r 0.1 1 10 0.00001 93166_05 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01 s ingle pul s e (thermal re s i s tance) allowable case temperature (c) i f(av) - average forward current (a) 8 6 4 210 12 0 140 160 170 180 100 120 130 150 110 93166_06 sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) dc allowable case temperature (c) i f(av) - average forward current (a) 8 6 4 210 12 0 120 160 180 40 80 100 140 60 93166_07 dc sq uare wave (d = 0.50) 80 % rated v r applied s ee note (1) average power loss (w) i f(av) - average forward current (a) 810 6 4 2 12 0 93166_08 20 25 0 10 15 5 d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc rm s limit
document number: 93166 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 18-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 VS-8E2TH06-E, vs-8e2th06-m, vs-8e2th06fp-e hyperfast rectifier, 8 a fred pt ? vishay semiconductors fig. 9 - typical reverse recovery time vs. di f /dt fig. 10 - typical stored charge vs. di f /dt fig. 11 - reverse recovery parameter test circuit fig. 12 - reverse recovery waveform and definitions t rr (ns) di f /dt (a/s) 100 93166_09 1000 10 60 40 30 20 50 i f = 8 a t j = 25 c t j = 125 c q rr (nc) di f /dt (a/s) 100 93166_10 1000 10 1000 100 i f = 8 a t j = 25 c t j = 125 c irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93166 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 18-aug-10 VS-8E2TH06-E, vs-8e2th06-m, vs-8e2th06fp-e vishay semiconductors hyperfast rectifier, 8 a fred pt ? ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description VS-8E2TH06-E 50 1000 antistatic plastic tubes vs-8e2th06-m 50 1000 antistatic plastic tubes vs-8e2th06fp-e 50 1000 antistatic plastic tubes links to related documents dimensions to-220ac www.vishay.com/doc?95259 to-220 full-pak www.vishay.com/doc?95260 part marking information to-220ac www.vishay.com/doc?95391 to-220 full-pak www.vishay.com/doc?95392 packaging information www.vishay.com/doc?95388 2 - current rating (8 = 8 a) 1 - vishay semiconductors product suffix 4 - 2 = true 2 pin package 5 - t = to-220 3 - circuit configuration: - environmental digit: e = single diode 6 - h = hyperfast recovery time 7 - voltage code (06 = 600 v) device code 5 1 3 2 4 6 7 8 8 vs- e 2 t h 06 fp 9 -e 9 -e = rohs compliant and terminations lead (pb)-free -m = halogen-free, rohs compliant and terminations lead (pb)-free none = to-220 fp = full-pak 8 -
document number: 95259 for technical questi ons concerning discrete products, contact: diodestech@vishay.com www.vishay.com revision: 21-jan-10 for technical questi ons concerning modul e products, contact: indmodules@vishay.com 1 true 2 pin to-220 outline dimensions vishay high power products dimensions in millimeters and inches notes (1) lead dimension and fini sh uncontrolled in l 1 ? these dimensions are within a llowable dimens ions of jedec to-220ab rev. j outline dated 3-24-87 ? controling dimension: inch e a f te r m . 4 e d l 0.150" ref. 0.002" 0.05 mm h 1 ? p q b 1 l 1 b j 1 c 12 ? 2.0 mm ref. 60 45 b a symbol millimeters inches min. max. min. max. a 4.32 4.57 0.170 0.180 b 0.71 0.91 0.028 0.036 b 1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 d 14.99 15.49 0.590 0.610 e 10.04 10.41 0.395 0.410 e 5.08 bsc 0.200 bsc f 1.22 1.37 0.048 0.054 h 1 5.97 6.47 0.235 0.255 j 1 2.54 2.79 0.100 0.110 l 13.47 13.97 0.530 0.550 l 1 (1) 3.31 3.81 0.130 0.150 ? p 3.79 3.88 0.149 0.153 q 2.60 2.84 0.102 0.112
document number: 95260 for technical questi ons concerning discrete products, contact: diodestech@vishay.com www.vishay.com revision: 22-jan-10 for technical questi ons concerning modul e products, contact: indmodules@vishay.com 1 true 2 pin to-220 full-pak outline dimensions vishay high power products dimensions in millimeters and inches ? q e a f e l h 1 c j 1 b d l 1 q 2 q 1 b 1 symbol millimeters inches min. max. min. max. a 4.53 4.93 0.178 0.194 b 0.71 0.91 0.028 0.036 b 1 1.15 1.39 0.045 0.055 c 0.36 0.53 0.014 0.021 d 15.67 16.07 0.617 0.633 e 9.96 10.36 0.392 0.408 e 5.08 typical 0.200 typical f 2.34 2.74 0.092 0.107 h 1 6.50 6.90 0.256 0.272 j 1 2.56 2.96 0.101 0.117 l 12.78 13.18 0.503 0.519 l 1 2.23 2.63 0.088 0.104 ? q 2.98 3.38 0.117 0.133 q 1 3.10 3.50 0.122 0.138 q 2 14.80 15.20 0.583 0.598 0 5 0 5
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